Optical orientation of electron spins and their relaxation mechanism in n-type GaAs

Authors

  • MI Miah Dept. of Physics, University of Chittagong, Chittagong-4331
  • A Staff Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111

DOI:

https://doi.org/10.3329/bjsir.v48i2.15744

Keywords:

spin transport, spin orientation, spin relaxation, semiconductor

Abstract

Bangladesh J. Sci. Ind. Res. 48(2), 131-136, 2013

DOI: http://dx.doi.org/10.3329/bjsir.v48i2.15744

Downloads

Download data is not yet available.
Abstract
86
PDF
60

Downloads

Published

2013-07-21

How to Cite

Miah, M., & Staff, A. (2013). Optical orientation of electron spins and their relaxation mechanism in n-type GaAs. Bangladesh Journal of Scientific and Industrial Research, 48(2), 131–136. https://doi.org/10.3329/bjsir.v48i2.15744

Issue

Vol. 48 No. 2 (2013)

Section

Articles

License

Bangladesh Council of Scientific and Industrial Research (BCSIR) holds the copyright to all contents published in Bangladesh Journal of Scientific and Industrial Research (BJSIR). A copyright transfer form should be signed by the author(s) and be returned to BJSIR.

The entire contents of the BJSIR are protected under Bangladesh Council of Scientific and Industrial Research (BCSIR) copyrights.

Creative Commons Licence
BJSIR is an open access journal, and articles are distributed under the terms of the Creative Commons Attribution-NonCommercial License (CC BY-NC) Creative Commons Attribution-NonCommercial 4.0 International License which allows others remix, tweak, and build upon the articles non-commercially, and although their new works must also acknowledge and be non-commercial, they don’t have to license their derivative works on the same terms.