Structural and Electrical Properties of Silicon Nitride Ceramic

Authors

  • M Hosneara National University
  • A Hasnat Departmet of Physics, Jagannath University, Dhaka
  • AH Bhuyan Dept of Physics, Bangladesh University of Engineering and Technology (BUET), Dhaka

DOI:

https://doi.org/10.3329/diujst.v7i1.9648

Keywords:

Silicon nitride ceramic, electrical properties, structural properties

Abstract

The effects of structural properties on the d.c. and a.c. electrical properties of different weight gain reaction bonded silicon nitride (RBSN) have been studied in this work. The degree of nitridation is assessed by the ‘weight gain’ of the ceramic, the percentage by which the weight is increased in the nitriding reaction. From X-ray diffraction (XRD) patterns, it is observed that a higher degree of nitradation sample has strong α-silicon nitride peaks. Intensity of α-silicon nitride peaks decreases with decreases weight gain. The higher degrees of nitridation, the samples have less significant Si peak. XRD patterns were recorded to calculate the lattice parameters of RBSN. The lattice parameters for three weight gain RBSN samples are found to be a =b = 7.7727 Å, c= 5.6565 Å (26% weight gain), a=b= 7.6272 Å, c= 5.6374 Å (42% weight gain) and a=b=7.6158 Å, c= 5.7732 Å (58.27% weight gain) and are in good agreement with the reported values from XRD patterns. Porosity (%) and surface morphology was observed by SEM.

Keywords: Silicon nitride ceramic; electrical properties; structural properties.  

DOI: http://dx.doi.org/10.3329/diujst.v7i1.9648  

Daffodil International University Journal of Science and Technology Vol.7(1) 2012 50-58

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How to Cite

Hosneara, M., Hasnat, A., & Bhuyan, A. (2012). Structural and Electrical Properties of Silicon Nitride Ceramic. Daffodil International University Journal of Science and Technology, 7(1), 50–59. https://doi.org/10.3329/diujst.v7i1.9648

Issue

Vol. 7 No. 1 (2012)

Section

Papers

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