Tetracene Based OTFT with Nd<sub>2</sub>O<sub>3</sub>-dielectric Layer

Authors

  • D. Saikia Research Scholar
  • R. Sarma Senior Lecturer in Physics
  • P. Saikia student
  • P. K. Saikia Senior Lecturer

DOI:

https://doi.org/10.3329/jsr.v2i2.4094

Keywords:

Organic thin film transistors, Tetracene, Rare earth oxide, Trap density.

Abstract

Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10-4 cm2/V.s, ON-OFF ratio 3.3x102, sub-threshold swing 0.06 V/decade and hole concentration 8.74x1017 cm-3.

 

Keywords: Organic thin film transistors; Tetracene; Rare earth oxide; Trap density.

 

© 2010 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved.

 

DOI: 10.3329/jsr.v2i2.4094               J. Sci. Res. 2 (2), 214-220 (2010)

 

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Author Biographies

D. Saikia, Research Scholar

Department-Physics

Research Fellow UGC-India

Spcl-Organic Electronics

J B College

Jorhat

Assam

 

R. Sarma, Senior Lecturer in Physics

 Dr. Ranjit Sarma

Principal Investigator Major Research Project U.G.C.

 Senior Lecturer Department of Physics, J.B. College,

 Jorhat, Assam, India. Pin-785001

P. Saikia, student

Department Physics, Dibrugarh University

Dibrugarh, Assam, India

P. K. Saikia, Senior Lecturer

 Senior Lecturer

Department Physics, Dibrugarh University

 Dibrugarh, Assam, India

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Published

2010-04-26

How to Cite

Saikia, D., Sarma, R., Saikia, P., & Saikia, P. K. (2010). Tetracene Based OTFT with Nd<sub>2</sub>O<sub>3</sub>-dielectric Layer. Journal of Scientific Research, 2(2), 214–220. https://doi.org/10.3329/jsr.v2i2.4094

Issue

Section

Section A: Physical and Mathematical Sciences