Tetracene Based OTFT with Nd<sub>2</sub>O<sub>3</sub>-dielectric Layer
Keywords:Organic thin film transistors, Tetracene, Rare earth oxide, Trap density.
Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10-4 cm2/V.s, ON-OFF ratio 3.3x102, sub-threshold swing 0.06 V/decade and hole concentration 8.74x1017 cm-3.
Keywords: Organic thin film transistors; Tetracene; Rare earth oxide; Trap density.
© 2010 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved.
DOI: 10.3329/jsr.v2i2.4094 J. Sci. Res. 2 (2), 214-220 (2010)
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