Empirical Equation of Tight Binding Model Parameter to Calculate Bandgap of Semiconducting Single Wall Carbon Nanotube

Authors

  • Golam Rasel Ahmed Jamal Department of Electrical and Electronic Engineering, Primeasia University, Dhaka
  • Md. Shamsul Arefin Department of Electrical and Electronic Engineering, American International University of Bangladesh, Dhaka

Keywords:

Carbon nanotube, band gap, nearestneighbor, hopping parameter, tight-binding model, chiral index, etc.

Abstract

Both Mod 1 and Mod 2 type Semiconducting single wall carbon nanotubes over a wide diameter range are studied separately to find their band gap trend. For accurate calculation of their band gaps, modification of nearest-neighbor hopping parameter of the tight-binding model is proposed by considering it as a function of nanotube chiral index and mod value. A simple empirical equation for the nearest-neighbor hopping parameter is presented to produce band gaps of these nanotubes that agree well with simulated data. Empirical data are also compared with experimental data and found to be in excellent agreement with it after adding a flat correction.

Journal of Electrical Engineering
The Institution of Engineers, Bangladesh
Vol. EE 37, No. II, December, 2011

Downloads

Download data is not yet available.
Abstract
306
PDF
449

Downloads

Published

2012-11-18

How to Cite

Ahmed Jamal, G. R., & Arefin, M. S. (2012). Empirical Equation of Tight Binding Model Parameter to Calculate Bandgap of Semiconducting Single Wall Carbon Nanotube. Journal of Electrical Engineering, 37(2), 4–9. Retrieved from https://banglajol.info/index.php/JEE/article/view/12671

Issue

Vol. 37 No. 2 (2011)

Section

Articles